lead-free gree n ds30928 rev. 2 - 2 1 of 5 dmn5l06wk www.diodes.com diodes incorporated dmn5l06wk n-channel enhancement mode field effect transistor characteristic symbol value units drain-source voltage v dss 50 v gate-source voltage v gss 20 v drain current (note 1) continuous pulsed (note 3) i d 300 800 ma total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating and storage temperature range t j ,t stg -65 to +150 c note: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. 4. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. mechanical data a m j l e d b c h k g g s d source e q uivalent circuit gate protection diode gate d ra i n new product case: sot-323 case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: finish matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 terminal connections: see diagram marking: see last page ordering & date code information: see last page weight: 0.006 grams (approximate) low on-resistance: r ds(on) very low gate threshold voltage low input capacitance fast switching speed low input/output leakage lead free by design/rohs compliant (note 2) esd protected up to 2kv "green" device (note 4) qualified to aec-q101 standards for high reliability features maximum ratings @ t a = 25c unless otherwise specified esd protected up to 2kv sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm
ds30928 rev. 2 - 2 2 of 5 dmn5l06wk www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified new product notes: 5. short duration test pulse used to minimize self-heating effect. characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 50 v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c i dss 60 na v ds = 50v, v gs = 0v gate-body leakage i gss 1 500 50 a na na v gs = 12v, v ds = 0v v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 0.49 1.2 v v ds =v gs , i d = 250 a static drain-source on-resistance r ds (on) 3.0 2.5 2.0 v gs = 1.8v, i d = 50ma v gs = 2.5v, i d = 50ma v gs = 5.0v, i d = 50ma on-state drain current i d(on) 0.5 1.4 a v gs = 10v, v ds = 7.5v forward transconductance |y fs | 200 ms v ds =10v, i d = 0.2a source-drain diode forward voltage v sd 0.5 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 25 pf reverse transfer capacitance c rss 5.0 pf 0 0.3 0.6 0.9 01 2 3 4 5 v ds , drain-source voltage (v) fi g .1 t y pical output characteristics i d , drain current (a) 1.2 1 .5 6v 10v 5v 3v 4v v=10v 8v 6v 5v 4v 3v gs 8v v , gate-source voltage (v) fi g .2 t y pical transfer characteristics gs 0.01 3 i, d drain current (a) 0.1 1 0 1 2 v = 10v pulsed ds t=-55c a t=-25c a t=125c a t=85c a t=25c a t = 150 c a
ds30928 rev. 2 - 2 3 of 5 dmn5l06wk www.diodes.com t , channel temperature (c) fig. 3 gate threshold voltage vs. channel tem p erature ch 0 -55 -25 0 25 50 75 100 125 150 v gate threshold voltage (v) gs(th), 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 . 0 v = 10v i=1ma pulsed ds d 0.1 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 10 0.001 0.01 0.1 1 v = 10v pulsed gs t=150c a t=-55c a t=-25c a t=25c a t=125c a t=85c a 1 i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 10 0.1 1 0.001 0.01 0.1 v=5v pulsed gs t=-55c a t=150c a t=-25c a t=25c a t = 125 c a t=85c a v gate source voltage (v) fig. 6 static drain-source on-resistance vs. gate-source volta g e gs, 0 0 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 . 0 2 4 6 8 10 12 14 16 18 t=25c pulsed a i = 140ma d i = 280ma d t , channel temperature ( c) fig. 7 ch static drain-source on-state resistance vs. channel tem p erature -50 -25 0 25 50 75 100 125 150 0 1 2 3 v = 10v pulsed gs i = 280ma d i = 140ma d i , reverse drain current (a) dr 0.001 0.01 0.1 0.5 0 1 1 v, fig. 8 reverse drain current vs. source-drain volta g e sd source-drain voltage (v) v=0v pulsed gs t=-55c a t = 150 c a t=-25c a t=25c a t=85c a t = 125 c a new product
ds30928 rev. 2 - 2 4 of 5 dmn5l06wk www.diodes.com new product 1 0.001 0.01 0.1 1 0 i , reverse drain current (a) dr v, fig. 9 reverse drain current vs. source-drain volta g e sd source-drain voltage (v) 0.2 0.4 0.6 0.8 v=10v gs v=0v gs t = 25c pulsed a 1 i , drain current (a) d fig.10 forward transfer admittance vs. drain current |y |, forward transfer admittance (s) fs 0.001 0.01 0.1 0.01 0.1 1 v=10v pulsed ds t= a -55 c t= a -25 c t= a 150 c t= a 125 c t= a 85 c t=25c a -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) fi g . 11 deratin g curve - total a r=625c/w 0 ja p , power dissipation (mw) d ordering information (note 6) device packaging shipping DMN5L06WK-7 sot-323 3000/tape & reel notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
important notice life support diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes witho ut further notice to any product herein. diodes incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written appr oval of the president of diodes incorporated. ds30928 rev. 2 - 2 5 of 5 dmn5l06wk www.diodes.com marking information dab ym dab = product type marking code ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september date code key month jan feb mar apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2006 2007 2008 2009 code tu vw new product
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